QRD1113
Manufacturer:
On Semiconductor
Mfr.Part #:
QRD1113
Datasheet:
Description:
Phototransistor DIP-4 Through Hole Operating Supply Voltage:1.7 V
| Parameter | Value |
|---|---|
| Max Operating Temperature | 85 °C |
| Min Operating Temperature | -40 °C |
| Collector Emitter Breakdown Voltage | 30 V |
| Collector Emitter Voltage (VCEO) | 30 V |
| Power Dissipation | 100 mW |
| Rise Time | 10 µs |
| Fall Time | 50 µs |
| Max Collector Current | 300 µA |
| Dark Current | 100 nA |
| Packaging | Bag |
| Collector Emitter Saturation Voltage | 400 mV |
| Operating Supply Voltage | 1.7 V |
| RoHS | Compliant |
Stock: 4438
Distributors
pcbx
pcbxUnit Price$0.67112
Ext.Price$0.67112
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.67112 | $0.67112 |
| 10 | $0.54972 | $5.49720 |
| 25 | $0.54015 | $13.50375 |
| 50 | $0.53075 | $26.53750 |
| 100 | $0.52150 | $52.15000 |
| 300 | $0.49922 | $149.76600 |
| 500 | $0.47790 | $238.95000 |
| 1000 | $0.45824 | $458.24000 |
| 3000 | $0.44037 | $1321.11000 |
| 5000 | $0.42319 | $2115.95000 |
| 10000 | $0.41122 | $4112.20000 |